MJE4343G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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MJE4343G
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حجم فایل
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69.84
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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10
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi MJE4343G
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Transistor Type:
NPN
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Operating Temperature:
-65°C~+150°C@(Tj)
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Collector Current (Ic):
16A
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Power Dissipation (Pd):
125W
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Transition Frequency (fT):
1MHz
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DC Current Gain (hFE@Ic,Vce):
15@8A,2V
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Collector Cut-Off Current (Icbo):
750uA
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Collector-Emitter Breakdown Voltage (Vceo):
160V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
3.5V@16A,2A
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Package:
TO-247
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tube
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Part Status:
Active
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Current - Collector (Ic) (Max):
16A
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Voltage - Collector Emitter Breakdown (Max):
160V
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Vce Saturation (Max) @ Ib, Ic:
3.5V @ 2A, 16A
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Current - Collector Cutoff (Max):
750µA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 8A, 2V
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Power - Max:
125W
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Frequency - Transition:
1MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-247-3
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Supplier Device Package:
TO-247
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Base Part Number:
MJE43
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detail:
Bipolar (BJT) Transistor NPN 160V 16A 1MHz 125W Through Hole TO-247
